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RQK0608BQDQS
Silicon N Channel MOS FET Power Switching
REJ03G1621-0100 Rev.1.00 Mar 03, 2008
Features
* Low on-resistance RDS(on) = 120 m typ.(at VGS = 4.5 V, ID = 1.6 A) * Low drive current * High speed switching * VDSS : 60 V and capable of 2.5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A (Package name: UPAK R )
2, 4 D 2 3 1G 4 S 3 1 1. Gate 2. Drain 3. Source 4. Drain
Note:
Marking is "BQ".
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Tch Tstg Ratings 60 12 3.2 10 3.2 1.5 150 -55 to +150 Unit V V A A A W C C
Notes: 1. PW 10 s, Duty cycle 1% 2. When using the glass epoxy board (FR-4 40 x 40 x 1 mm)
REJ03G1621-0100 Rev.1.00 Mar 03, 2008 Page 1 of 7
RQK0608BQDQS
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Drain to source on state resistance Drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total gate charge Gate to Source charge Gate to drain charge Body - drain diode forward voltage Notes: 3. Pulse test Symbol V(BR)DSS V(BR)GSS V(BR)GSS IGSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF Min 60 +12 -12 -- -- -- 0.4 -- -- 5 -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- -- -- 120 140 7.5 300 36 20 12 64 32 4 3 0.6 1 0.8 Max -- -- -- +10 -10 1 1.4 155 195 -- -- -- -- -- -- -- -- -- -- -- -- Unit V V V A A A V m m S pF pF pF ns ns ns ns nC nC nC V Test conditions ID = 10 mA, VGS = 0 IG = +100 A, VDS = 0 IG = -100 A, VDS = 0 VGS = +10 V, VDS = 0 VGS = -10 V, VDS = 0 VDS = 60 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 1.6 A, VGS = 4.5 V Note3 ID = 1.6 A, VGS = 2.5 V Note3 ID = 1.6 A, VDS = 10 V Note3 VDS = 10 V VGS = 0 f = 1 MHz ID = 1.6 A VGS = 4.5 V RL = 6.2 Rg = 4.7 VDD = 10 V VGS = 4.5 V ID = 3.2 A IF = 3.2 A, VGS = 0 Note3
REJ03G1621-0100 Rev.1.00 Mar 03, 2008 Page 2 of 7
RQK0608BQDQS
Main Characteristics
Maximum Channel Power Dissipation Curve
2 100
Operation in this area is limited by RDS(on)
Maximum Safe Operation Area
Channel Dissipation Pch (W)
1.5
Drain Current ID (A)
10
10 s 100 s
1
1 ms
100 ms
1
10 ms
0.1 0.01
Ta = 25C 1 Shot Pulse
0.5
DC Operation
0 0
25
50
75
100
125
150
0.001 0.01
0.1
1
10
100
Ambient Temperature Ta (C)
*When using the glass epoxy board (FR-4 40 x 40 x 1 mm)
Drain to Source Voltage VDS (V)
8V, 10 V
Typical Output Characteristics
4 V 2.4 V 2.6 V 2.2 V
Typical Transfer Characteristics (1)
10 -25C 25C
10
Drain Current ID (A)
2.0 V
Drain Current ID (A)
8
2.8 V
Pulse Test Tc = 25C
8
6
1.8 V
6
Tc = 75C
4
1.6 V
4
2
1.4 V VGS = 0V
2 VDS = 10 V Pulse Test 0 0 1 2 3 4
0
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Gate to Source Cutoff Voltage vs.
Gate to Source Cutoff Voltage VGS(off) (V)
Typical Transfer Characteristics (2)
1 VDS = 10 V Pulse Test
Case Temperature
2.0 VDS = 10 V Pulse Test 1.5 ID = 10 mA 1.0
Drain Current ID (A)
0.1
Tc = 75C
0.01
25C
0.001 -25C
0.5
0.0001 0.00001 0 0.5 1
1 mA 0.1 mA
1.5
2
0 -25 0 25 50 75 100 125 150
Gate to Source Voltage VGS (V)
Case Temperature Tc (C)
REJ03G1621-0100 Rev.1.00 Mar 03, 2008 Page 3 of 7
RQK0608BQDQS
Drain to Source Saturation Voltage vs. Gate to Source Voltage
800
Static Drain to Source on State Resistance vs. Drain Current
Drain to Source on State Resistance RDS(on) (m)
Drain to Source Saturation Voltage VDS(on) (mV)
Pulse Test Tc = 25C
1000
600
VGS = 2.5 V
400
ID = 3.2 A 2.4 A
100 10 V 4.5 V
200
1.6 A 1.0 A 0.5 A
Pulse Test Tc = 25C 10 0.1 1 10
0 0
2
4
6
8
10
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Case Temperature (1)
300 Pulse Test VGS = 4.5 V 250 200 ID = 3.2 A 2.4 A 1.6 A 1.0 A 0.5A 100 50 -25
Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature (2)
Drain to Source on State Resistance RDS(on) (m)
Drain to Source on State Resistance RDS(on) (m)
300
Pulse Test VGS = 2.5 V
ID = 3.2 A 2.4 A 1.6 A
250
200 0.5A
1.0 A
150
150
100 50 -25
0
25
50
75
100 125 150
0
25
50
75
100 125 150
Case Temperature Tc (C)
Case Temperature Tc (C)
Zero Gate Voltage Drain current vs. Case Temperature
10000 Pulse Test VGS = 0 V VDS = 60 V
100 Pulse Test VDS = 10 V -25C 10
Zero Gate Voltage Drain current IDSS (nA)
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S)
1000
100
25C 1 Tc = 75C
10
1 0.1 -25
0.1 0.01
0.1
1
10
0
25
50
75
100 125 150
Drain Current ID (A)
Case Temperature Tc (C)
REJ03G1621-0100 Rev.1.00 Mar 03, 2008 Page 4 of 7
RQK0608BQDQS
Dynamic Input Characteristics
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)
80 VDD = 10 V 25 V 50 V VDD = 50 V 25 V 10 V 16 10000 VGS = 4.5 V, VDD = 10 V Rg = 4.7 , duty 1 % Tc = 25C 1000 tr
Switching Characteristics
60
12
Switching Time t (ns)
40
8
100 td(off) td(on) 10 tf 1 0.01 0.1 1 10
20
4
ID = 2.4 A Tc = 25C
0 0 2 4 6 8 0 10
Gate Charge Qg (nC)
Drain Current ID (A)
Typical Capacitance vs. Drain to Source Voltage
1000 600
VGS = 0 V f = 1 MHz
Input Capacitance vs. Gate to Source Voltage
Ciss, Coss, Crss (pF)
Ciss
550
Ciss (pF)
Coss Crss
500
100
450
400
10 0 10 20 30 40 50 60
VDS = 0 f = 1MHz
0 2 4 6 8 10
350 -10 -8 -6 -4 -2
Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage
10
Gate to Source Voltage VGS (V) Body-Drain Diode Forward Voltage vs. Case Temperature
0.6 VGS = 0 0.5 ID = 10 mA 0.4
Reverse Drain Current IDR (A)
Pulse Test Tc = 25C 8 2.5 V 4.5 V 10 V 0V 2 VGS = -2.5, -4.5, -10 V 0 0 0.4 0.8 1.2 1.6 2.0
6
4
Body-Drain Diode Forward Voltage VSDF (V)
0.3
1 mA
0.2 -25
0
25
50
75
100 125 150
Source to Drain Voltage VSD (V)
Case Temperature Tc (C)
REJ03G1621-0100 Rev.1.00 Mar 03, 2008 Page 5 of 7
RQK0608BQDQS
Switching Time Test Circuit Switching Time Waveform
Vin Monitor Rg D.U.T. RL
Vout Monitor Vin Vout 10% 10%
90%
10%
Vin 4.5 V
VDD = 10 V
90% td(on) tr
90% td(off) tf
REJ03G1621-0100 Rev.1.00 Mar 03, 2008 Page 6 of 7
RQK0608BQDQS
Package Dimensions
Package Name UPAK JEITA Package Code SC-62 RENESAS Code PLZZ0004CA-A Previous Code UPAK / UPAKV MASS[Typ.] 0.050g
Unit: mm
4.5 0.1
1.5 1.5 3.0
Ordering Information
Part No. RQK0608BQDQSTL-E Quantity 1000 pcs. Shipping Container 178 mm reel, 12 mm Emboss taping
REJ03G1621-0100 Rev.1.00 Mar 03, 2008 Page 7 of 7
0.8 Min
0.44 Max
(0.4)
0.53 Max 0.48 Max
(2.5)
1
2.5 0.1 4.25 Max
0.4
1.8 Max
1.5 0.1 0.44 Max
(1.5)
(0.2)
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